 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| J/SSTJ210 Series N-Channel JFETs J210 J211 J212 Product Summary Part Number J210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 VGS(off) (V) -1 to -3 -2.5 to -4.5 -4 to -6 V(BR)GSS Min (V) -25 -25 -25 gfs Min (mS) 4 6 7 IDSS Min (mA) 2 7 15 Features D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA Benefits D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification Applications D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches Description The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). while the TO-236 (SOT-23) package provides surface-mount capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information). The TO-226AA (TO-92) plastic package, provides low cost For similar dual products, see the 2N5911/5912 and U440/441 data sheets. TO-226AA (TO-92) D 1 D S 2 S G 3 J210 J211 J212 2 1 TO-236 (SOT-23) 3 G SSTJ211 (Z1)* SSTJ212 (Z2)* *Marking Code for TO-236 Top View Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70234. Applications information may also be obtained via FaxBack, request document #70597. Siliconix S-52428--Rev. D, 14-Apr-97 1 J/SSTJ210 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J210 J/SSTJ211 J/SSTJ212 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentb Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = -8 V IG = 1 mA , VDS = 0 V -35 -25 -1 2 -3 15 -100 -25 -2.5 7 -4.5 20 -100 -25 V -4 15 -6 40 -100 mA pA nA pA V -1 -0.5 -1 1 0.7 Drain Cutoff Current Gate-Source Forward Voltage Dynamic Common-Source Forward Transconductance c Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 kHz 4 VDS = 15 V, VGS = 0 V S f = 1 MHz 1.5 5 nV Hz NZF pF 4 12 150 6 12 200 7 12 200 mS mS VDS = 15 V, VGS = 0 V S f = 1 kHz Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. 2 Siliconix S-52428--Rev. D, 14-Apr-97 J/SSTJ210 Series Typical Characteristics (25_C Unless Noted) 50 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 20 gfs - Forward Transconductance (mS) 100 nA 10 nA Gate Leakage Current IG(on) @ ID TA = 125_C 40 16 I G - Gate Leakage 1 nA IGSS @ 125_C 100 pA 10 pA TA = 25_C 1 pA 0.1 pA 0 4 8 10 mA 30 12 1 mA 1 mA 10 mA 20 gfs 8 10 IDSS 4 IGSS @ 25_C 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 12 16 20 VDG - Drain-Gate Voltage (V) 200 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage gos 200 g fs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz g os - Output Conductance ( mS) 160 160 8 TA = -55_C 6 25_C 4 125_C 2 120 120 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 80 40 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -10 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 5 VGS(off) = -2 V 4 I D - Drain Current (mA) VGS = 0 V -0.2 V I D - Drain Current (mA) -0.4 V 3 -0.6 V 2 -0.8 V 1 -1.0 V -1.2 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 15 Output Characteristics VGS(off) = -5 V 12 -0.5 V 9 -2.0 V 6 -1.0 V -1.5 V VGS = 0 V -2.5 V -3.0 V 3 -3.5 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Siliconix S-52428--Rev. D, 14-Apr-97 3 J/SSTJ210 Series Typical Characteristics (25_C Unless Noted) 10 Output Characteristics VGS(off) = -2 V 30 Output Characteristics VGS = 0 V -0.5 V -1.0 V 8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V 2 -0.8 V -1.0 V -1.2 V 0 2 4 6 8 10 24 18 -1.5 V -2.0 V 12 -2.5 V -3.0 V 6 VGS(off) = -5 V 0 2 4 6 8 -3.5 V 0 VDS - Drain-Source Voltage (V) 0 10 VDS - Drain-Source Voltage (V) 10 Transfer Characteristics VGS(off) = -2 V VDS = 10 V 30 Transfer Characteristics VGS(off) = -5 V VDS = 10 V 8 I D - Drain Current (mA) TA = -55_C 6 25_C I D - Drain Current (mA) 24 TA = -55_C 18 25_C 125_C 4 125_C 2 12 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 10 g fs - Forward Transconductance (mS) 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 10 g fs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage VGS(off) = -2 V VDS = 10 V f = 1 kHz 25_C Transconductance vs. Gate-Source Voltage VGS(off) = -5 V 8 TA = -55_C 8 TA = -55_C 25_C 6 125_C 4 6 125_C 4 2 2 VDS = 10 V f = 1 kHz 0 0 -1 -2 -3 -4 -5 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 4 Siliconix S-52428--Rev. D, 14-Apr-97 J/SSTJ210 Series Typical Characteristics (25_C Unless Noted) 200 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current 50 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os 160 VGS(off) = -2 V A V - Voltage Gain 120 40 30 Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 80 VGS(off) = -5 V 20 VGS(off) = -2 V VGS(off) = -5 V 40 TA = 25_C 0 1 10 ID - Drain Current (mA) 100 10 0 0.1 1 ID - Drain Current (mA) 10 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 5 V 4 VDS = 0 V 3 VDS = 5 V 2 VDS = 0 V 1 VDS = 10 V 2 VDS = 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Input Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA gig bis (mS) 100 TA = 25_C VDS = 10 V ID = 10 mA 10 Forward Admittance 10 (mS) -bfs 1 bfg 1 -gfg gfs big gis 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) Siliconix S-52428--Rev. D, 14-Apr-97 5 J/SSTJ210 Series Typical Characteristics (25_C Unless Noted) 10 TA = 25_C VDS = 10 V ID = 10 mA 1 (mS) -brs (mS) 10 Reverse Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA Output Admittance -brg 0.1 -grs bog, bos 1 -grg 0.01 100 200 grg 0.1 500 1000 gog, gos 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) 50 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 Output Conductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz TA = -55_C (nV / Hz) g os - Output Conductance ( mS) 40 120 30 e n - Noise Voltage ID = 1 mA 20 ID = 10 mA 90 25_C 60 10 30 125_C 0 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 6 Siliconix S-52428--Rev. D, 14-Apr-97 |
Price & Availability of J210
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |